Search for: All records

The Anderson localization of phonons in disordered superlattices has been proposed as a route to suppress thermal conductivity beyond the limits imposed by conventional scattering mechanisms. A commonly used signature of phonon localization is the emergence of the nonmonotonic dependence of thermal conductivity κ on system length L, i.e., a κ-L maximum. However, such behavior has rarely been observed. In this work, we conduct extensive non-equilibrium molecular dynamics (NEMD) simulations, using the LAMMPS package, on both periodic superlattices (SLs) and aperiodic random multilayers (RMLs) constructed from Si/Ge and Lennard-Jones materials. By systematically varying acoustic contrast, interatomic bond strength, and average layer thickness, we examine the interplay between coherent and incoherent phonon transport in these systems. Our two-phonon model decomposition reveals that coherent phonons alone consistently exhibit a strong nonmonotonic κ-L. This localization signature is often masked by the diffusive, monotonically increasing contribution from incoherent phonons. We further extract the ballistic-limit mean free paths for both phonon types, and demonstrate that incoherent transport often dominates, thereby concealing localization effects. Our findings highlight the importance of decoupling coherent and incoherent phonon contributions in both simulations and experiments. This work provides new insights and design principles for achieving phonon Anderson localization in superlattice structures. 

Abstract The rational design of the electronic band structures and the associated properties (e.g. optical) of advanced materials has remained challenging for crucial applications in optoelectronics, solar desalination, advanced manufacturing technologies, etc. In this work, using first-principles calculations, we studied the prospects of tuning the absorption spectra of graphene via defect engineering, i.e. chemical doping and oxidation. Our computational analysis shows that graphene functionalization with single hydroxyl and carboxylic acid fails to open a band gap in graphene. While single epoxide functionalization successfully opens a bandgap in graphene and increases absorptivity, however, other optical properties such as reflection, transmission, and dielectric constants are significantly altered. Boron and nitrogen dopants lead to p- and n-type doping, respectively, while fluorine dopants or a single-carbon atomic vacancy cannot create a significant bandgap in graphene. By rigorously considering the spin-polarization effect, we find that titanium, zirconium, and hafnium dopants can create a bandgap in graphene via an induced flat band around the Fermi level as well as the collapse of the Dirac cone. In addition, silicon, germanium, and tin dopants are also effective in improving the optical characteristics. Our work is important for future experimental work on graphene for laser and optical processing applications.